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US 2022/0063986 A1Published application
Multiaxial strain engineering of defect doped materials
AssigneesMassachusetts Institute of Technology, Nanyang Technological University
InventorsSubra Suresh, Ming Dao, Ju Li, Zhe Shi
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Abstract
Compositions and methods related to multiaxially straining defect doped materials as well as their use in electrical circuits are generally described.
Claims20
An electrical device comprising:
- a defect doped material forming at least a portion of an electrical circuit;
- and
- one or more actuators configured to selectively apply a multiaxial strain to at least a first portion of the defect doped material, wherein the defect doped material is a non-conducting material when the defect doped material is in an unstrained state, and wherein at least a second portion of the defect doped material is a semiconducting material or a conducting material when the one or more actuators apply the multiaxial strain to the defect doped material in a strained state.
A method of controlling a conductive state of a defect doped material, the method comprising:
- applying a multiaxial strain to at least a first portion of the defect doped material;
- and
- transitioning at least a second portion of the defect doped material from a non-conductive material to a semiconducting material or a conducting material.
A composition comprising:
- a defect doped material, wherein a multiaxial strain is applied to at least a first portion of the defect doped material in a strained state, wherein the defect doped material is a non-conducting material when the defect doped material is in an unstrained state, and wherein at least a second portion of the defect doped material is a semiconducting material or a conducting material when the multiaxial strain is applied to the defect doped material.
Dependencies are inferred from the claim text.