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US 2022/0055904 A1Published application
Resistive memory devices having laser-induced graphene composites and methods of making same
AssigneesB.G. Negev Technologies and Applications Ltd., At Ben-Gurion University, William Marsh Rice University
InventorsJames Mitchell Tour, Duy X. Luong, Kaichun Yang, Christopher John Arnusch, Swatantra Pratap Singh, Amit Kumar Thakur, Michael G. Stanford, John T. Li, Steven E. Presutti
Life of this patent
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Abstract
Resistive memory devices having laser-induced graphene (LIG) composites, and methods of making resistive memory devices having LIG composites.
Claims14
1-116. (canceled)
A method of making a resistive memory device comprising:
- (a) selecting a LIG composite;
- and
- (b) depositing a metal by e-beam evaporation on the LIG composite.
A resistive memory device comprising a LIG composite.
125A-126A. (canceled)
127-128. (canceled)
Dependencies are inferred from the claim text.