Ultra-thin conductor based semi-transparent electromagnetic interference shielding

A method for broadband electromagnetic shielding comprising:

• disposing an electromagnetic shield in a transmission path of electromagnetic radiation to block a range of frequencies of greater than or equal to about 800 MHz to less than or equal to about 90 GHz to a shielding efficiency of greater than or equal to 20 dB while transmitting a range of wavelengths in a visible range of greater than or equal to about 390 nm to less than or equal to about 740 nm to an average visible transmission efficiency of greater than or equal to about 65% through the electromagnetic shield, wherein the electromagnetic shield comprises:
• a first flexible stack comprising:
• a first continuous metal film defining a first side and an opposite second side and comprising silver (Ag) at greater than or equal to about 80 atomic % and copper (Cu) at less than or equal to about 20 atomic % having a thickness of less than or equal to about 10 nm, a sheet resistance of less than or equal to about 20 Ohm/square, that is substantially transparent to the range of wavelengths;
• a first conductive layer disposed on the first side of the first continuous metal film, wherein the first conductive layer comprises a conductive dielectric material selected from the group consisting of:
• indium tin oxide, aluminum tin oxide, indium tin oxide, fluorine-doped tin oxide, poly(3,4-ethylenedioxythiophene) (PEDOT), and mixtures thereof;
• a second conductive layer disposed on the opposite second side of the first continuous metal film, wherein the second conductive layer comprises a conductive dielectric material selected from the group consisting of:
• indium tin oxide, aluminum tin oxide, indium tin oxide, fluorine-doped tin oxide, poly(3,4-ethylenedioxythiophene) (PEDOT), and mixtures thereof;
• a second flexible stack comprising:
• a second continuous metal film defining a first side and an opposite second side and comprising silver (Ag) at greater than or equal to about 80 atomic % and copper (Cu) at less than or equal to about 20 atomic % having a thickness of less than or equal to about 10 nm, a sheet resistance of less than or equal to about 20 Ohm/square, that is substantially transparent to the range of wavelengths;
• a third layer disposed on the first side of the second continuous metal film, wherein the third layer comprises a conductive dielectric material selected from the group consisting of:
• indium tin oxide, aluminum tin oxide, indium tin oxide, fluorine-doped tin oxide, poly(3,4-ethylenedioxythiophene) (PEDOT), and mixtures thereof;
• a fourth layer disposed on the opposite second side of the second continuous metal film, wherein the fourth layer comprises a conductive dielectric material selected from the group consisting of:
• indium tin oxide, aluminum tin oxide, indium tin oxide, fluorine-doped tin oxide, poly(3,4-ethylenedioxythiophene) (PEDOT), and mixtures thereof;
• and
• a spacing layer comprising a dielectric material disposed between the first flexible stack and the second flexible stack.

An electromagnetic interference (EMI) shield comprising:

• a first flexible stack comprising:
• a first continuous metal film defining a first side and an opposite second side and comprising silver (Ag) at greater than or equal to about 80 atomic % and copper (Cu) at less than or equal to about 20 atomic % having a thickness of less than or equal to about 10 nm, a sheet resistance of less than or equal to about 20 Ohm/square, that is substantially transparent to a range of wavelengths in a visible range of greater than or equal to about 390 nm to less than or equal to about 740 nm;
• a first conductive layer disposed on the first side of the first continuous metal film, wherein the first conductive layer comprises a conductive dielectric material selected from the group consisting of:
• indium tin oxide, aluminum tin oxide, indium tin oxide, fluorine-doped tin oxide, poly(3,4-ethylenedioxythiophene) (PEDOT), and mixtures thereof;
• a second conductive layer disposed on the opposite second side of the first continuous metal film, wherein the second conductive layer comprises a conductive dielectric material selected from the group consisting of:
• indium tin oxide, aluminum tin oxide, indium tin oxide, fluorine-doped tin oxide, poly(3,4-ethylenedioxythiophene) (PEDOT), and mixtures thereof;
• a second flexible stack comprising:
• a second continuous metal film defining a first side and an opposite second side and comprising silver (Ag) at greater than or equal to about 80 atomic % and copper (Cu) at less than or equal to about 20 atomic % having a thickness of less than or equal to about 10 nm, a sheet resistance of less than or equal to about 20 Ohm/square, that is substantially transparent to the range of wavelengths in the visible range of greater than or equal to about 390 nm to less than or equal to about 740 nm;
• a third layer disposed on the first side of the second continuous metal film, wherein the third layer comprises a conductive dielectric material selected from the group consisting of:
• indium tin oxide, aluminum tin oxide, indium tin oxide, fluorine-doped tin oxide, poly(3,4-ethylenedioxythiophene) (PEDOT), and mixtures thereof;
• a fourth layer disposed on the opposite second side of the second continuous metal film, wherein the fourth layer comprises a conductive dielectric material selected from the group consisting of:
• indium tin oxide, aluminum tin oxide, indium tin oxide, fluorine-doped tin oxide, poly(3,4-ethylenedioxythiophene) (PEDOT), and mixtures thereof;
• and
• a spacing layer comprising a dielectric material disposed between the first flexible stack and the second flexible stack.

An electromagnetic interference (EMI) shield comprising:

• a continuous metal film defining a first side and an opposite second side and comprising silver (Ag) at greater than or equal to about 80 atomic % and copper (Cu) at less than or equal to about 20 atomic % having a thickness of less than or equal to about 10 nm, a sheet resistance of less than or equal to about 20 Ohm/square;
• a first conductive layer disposed in contact with the first side of the continuous metal film, wherein the first conductive layer comprises a conductive dielectric material selected from the group consisting of:
• indium tin oxide, aluminum tin oxide, indium tin oxide, fluorine-doped tin oxide, poly(3,4-ethylenedioxythiophene) (PEDOT), and mixtures thereof;
• and
• a second conductive layer disposed in contact with the opposite second side of the continuous metal film, wherein the second conductive layer comprises a conductive dielectric material selected from the group consisting of:
• indium tin oxide, aluminum tin oxide, indium tin oxide, fluorine-doped tin oxide, poly(3,4-ethylenedioxythiophene) (PEDOT), and mixtures thereof;
• and
• a spacing layer comprising a dielectric material adjacent to the second conductive layer;
• and
• a graphene layer adjacent to the spacing layer.

A method for broadband electromagnetic shielding comprising:

• disposing an electromagnetic shield in a transmission path of electromagnetic radiation to block a range of frequencies of greater than or equal to about 800 MHz to less than or equal to about 90 GHz to a shielding efficiency of greater than or equal to 30 dB while transmitting a range of wavelengths in a visible range of greater than or equal to about 390 nm to less than or equal to about 740 nm to an average transmission efficiency of greater than or equal to about 80% through the electromagnetic shield, wherein the electromagnetic shield comprises:
• a continuous metal film defining a first side and an opposite second side and comprising silver (Ag) at greater than or equal to about 80 atomic % and copper (Cu) at less than or equal to about 20 atomic % having a thickness of less than or equal to about 10 nm, a sheet resistance of less than or equal to about 20 Ohm/square;
• a first conductive layer disposed in contact with the first side of the continuous metal film, wherein the first conductive layer comprises a conductive material selected from the group consisting of:
• indium tin oxide, aluminum zinc oxide (AZO), indium zinc oxide (IZO), fluorine-doped tin oxide (FTO), poly(3,4-ethylenedioxythiophene) (PEDOT), and mixtures thereof;
• and
• a second conductive layer disposed in contact with the opposite second side of the continuous metal film, wherein the second conductive layer comprises a conductive material selected from the group consisting of:
• indium tin oxide, aluminum zinc oxide (AZO), indium zinc oxide (IZO), fluorine-doped tin oxide (FTO), poly(3,4-ethylenedioxythiophene) (PEDOT), and mixtures thereof;
• and
• a spacing layer comprising a dielectric material adjacent to the second conductive layer;
• and
• a graphene layer adjacent to the spacing layer.