Photoelectric conversion element, measuring method of the same, solid-state imaging device, electronic device, and solar cell

A photoelectric conversion element, comprising:

• a positive electrode;
• a negative electrode;
• at least one charge blocking layer arranged between the positive electrode and the negative electrode;
• and
• a photoelectric conversion layer arranged between the positive electrode and the negative electrode, wherein
• the at least one charge blocking layer comprises two electron blocking layers,
• the two electron blocking layers comprises a first electron blocking layer and a second electron blocking layer,
• an acceptor impurity density of the first electron blocking layer is different from that of an acceptor impurity density of the second electron blocking layer,
• positions X1, X2, and X3 are located at specific distances x1, x2, and x3, wherein x1, x2, and x3 satisfies a condition x1<x2<x3 from an interface between the two electron blocking layers and the negative electrode toward the photoelectric conversion layer, and
• absolute values ΔE(X1), ΔE(X2), and ΔE(X3) of a difference between an electron affinity Ea of the electron blocking layer and a work function WF of the negative electrode at each position satisfy a following formula (1),
• ΔE(X2)>ΔE(X1) and ΔE(X2)>ΔE(X3) (1).