Resistive change elements using passivating interface gaps and methods for making same

A method to fabricate a memory element, said method comprising:

• forming a first conductive material over a substrate;
• depositing a resistive change material over said first conductive material;
• forming a second conductive material over said resistive change material;
• exposing a first surface and a second surface of said resistive change material while said resistive change material remains between said first conductive material and said second conductive material;
• after exposing said first surface and said second surface of said resistive change material, depositing an evaporative material in direct contact with said exposed first surface and said exposed second surface of said resistive change material;
• after depositing said evaporative material, forming a cover material over said evaporative material;
• and
• evaporating a portion of said evaporative material through said cover material to create a gap between said cover material and said first surface and said second surface of said resistive change material.

A method to fabricate a memory element, said method comprising:

• forming a first electrode over a substrate;
• depositing a resistive change material over said first electrode;
• forming a second electrode over said resistive change material;
• etching said second electrode and said resistive change material to expose a first surface and a second surface of said resistive change material, said first surface and said second surface of said resistive change material being substantially perpendicular to a first surface of said substrate;
• after exposing said first surface and said second surface of said resistive change material, depositing an evaporative material in direct contact with said exposed first surface and said exposed second surface of said resistive change material, depositing said evaporative material including depositing said evaporative material into a portion of said resistive change material;
• etching said evaporative material to at least remove said evaporative material over said second electrode;
• after etching said evaporative material, forming a cover material over and directly in contact with said evaporative material, said forming of said cover material occurring at a first temperature;
• evaporating a portion of said evaporative material through said cover material at a second temperature to create a gap between said cover material and said first surface and said second surface of said resistive change material and to remove said evaporative material in said portion of said resistive change material, the second temperature being higher than the first temperature;
• after evaporating said portion of said evaporative material;
• depositing a second insulative material over said cover material;
• forming an opening through said second insulative material and said cover material to expose said second electrode;
• and
• depositing a conductive material into said opening, the conductive material electrically coupling to said second electrode.