Memristor device, method of fabricating thereof, synaptic device including memristor device and neuromorphic device including synaptic device

A method of fabricating a memristor device comprising:

• forming a first electrode;
• forming a resistance change layer including a copolymer on the first electrode;
• and
• forming a second electrode on the resistance change layer,
• wherein the copolymer is a copolymer of a first monomer and a second monomer, and a first metal ion diffusivity of a first polymer formed from the first monomer is faster than a second metal ion diffusivity of a second polymer formed from the second monomer.

A neuromorphic device having synaptic array, the synaptic array comprising:

• a plurality of memristor devices arranged to constitute a plurality of columns and a plurality of rows;
• a plurality of first wires;
• and
• a plurality of second wires intersecting with the first wires,
• wherein each mem resistor device comprises
• opposing electrodes disposed to be spaced apart from each other, and
• a resistance change layer including a copolymer between the opposing electrodes,
• wherein the copolymer is a copolymer of a first monomer and a second monomer, and a first metal ion diffusivity of a first polymer formed from the first monomer is faster than a second metal ion diffusivity of a second polymer formed from the second monomer, and
• wherein
• the memristor devices are provided at intersections of the first wires and the second wires, and
• the plurality of first wires and the plurality of second wirings are connected respectively to the opposing electrodes of the memristor devices.