Method for manufacturing intermediate body for thermoelectric conversion module

Abstract

A method for producing an intermediate for thermoelectric conversion modules may avoid a supporting substrate, enabling annealing of a thermoelectric semiconductor material in a form avoiding a joint to an electrode, and enabling annealing of a thermoelectric semiconductor material at an optimum temperature. Such methods may produce an intermediate for thermoelectric conversion modules containing a P-type thermoelectric and an N-type thermoelectric element layer of a thermoelectric semiconductor composition, and include (A) forming the P-type thermoelectric element layer and the N-type thermoelectric element layer on a substrate; (B) annealing the P-type and N-type thermoelectric element layer formed in (A); (C) forming a sealant layer containing a curable resin or a cured product thereof, on the P-type and N-type thermoelectric element layer annealed in (B); and (D) peeling the P-type and the N-type thermoelectric element layer and also the sealant layer formed in (B) and (C) from the substrate.

Dependencies are inferred from the claim text.