Semiconductor Device and Method

A device comprising:

• an interconnect structure comprising a first contact pad, a second contact pad, and an alignment mark;
• a light emitting diode comprising a cathode and an anode, the cathode connected to the first contact pad;
• an encapsulant encapsulating the light emitting diode;
• a first conductive via extending through the encapsulant, the first conductive via comprising a first seed layer, the first seed layer contacting the second contact pad;
• a second conductive via extending through the encapsulant, the second conductive via comprising a second seed layer, the first seed layer and the second seed layer comprising a first metal;
• and
• a hardmask layer between the second seed layer and the alignment mark, the hardmask layer comprising a second metal, the second metal different from the first metal.

A device comprising:

• an interconnect comprising a first contact pad and a second contact pad;
• a light emitting diode connected to the first contact pad of the interconnect;
• an encapsulant surrounding the light emitting diode;
• a first conductive via extending through the encapsulant, the first conductive via electrically connected to the second contact pad of the interconnect, the first conductive via comprising a first conductive material and a first seed layer, the first seed layer contacting the second contact pad of interconnect, the first conductive material contacting the first seed layer, the first seed layer disposed between the first conductive material and the interconnect, the first seed layer further disposed between the first conductive material and the encapsulant;
• a second conductive via extending through the encapsulant, the second conductive via comprising a second conductive material, a second seed layer, and a mask layer, the second seed layer contacting the mask layer, the second conductive material contacting the second seed layer;
• and
• a conductive line connecting the light emitting diode to the first conductive via.