Optoelectronic semiconductor component having a first and second metal layer and method for producing the optoelectronic semiconductor component

An optoelectronic semiconductor component, comprising:

• a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active zone, wherein:
• the first semiconductor layer is arranged over the second semiconductor layer, the active zone is arranged between the first and second semiconductor layer and the first semiconductor layer and the second semiconductor layer are patterned to form a mesa so that parts of the second semiconductor layer are free from the first semiconductor layer and a portion of the active zone is exposed in the area of a mesa flank;
• a passivation layer arranged over parts of the first semiconductor layer and over parts of the second semiconductor layer as well as over the exposed portion of the active zone;
• a first metal layer electrically connected to the first semiconductor layer;
• and
• a second metal layer electrically connected to the second semiconductor layer, and wherein the first metal layer or a metallic mirror layer electrically separate from the second metal layer covers the passivation layer in the area of the mesa flank.

A method for producing an optoelectronic semiconductor component, comprising:

• forming a semiconductor layer stack comprising a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and an active zone, the active zone being arranged between the first and second semiconductor layers;
• patterning a mesa so that parts of the second semiconductor layer are free from the first semiconductor layer and a portion of the active zone is exposed in the area of a mesa flank;
• forming a passivation layer over parts of the first semiconductor layer, over parts of the second semiconductor layer and over the exposed portion of the active zone;
• forming a first metal layer electrically connected to the first semiconductor layer;
• forming a second metal layer electrically connected to the second semiconductor layer,
• wherein the second metal layer covers the passivation layer in the area of the mesa flank and a composition of the first metal layer adjacent to the first semiconductor layer is constant in a horizontal direction,
• wherein the first metal layer directly adjoins the first semiconductor layer and a lateral positioning of the first metal layer differs by less than 100 nm from the lateral positioning of the patterned first semiconductor layer.