Phosphor converter structures for thin film packages and method of manufacture

A light emitting device (LED) comprising:

• a light emitting semiconductor structure having a first surface, a second surface opposite the first surface, and a side surface connecting the first and second surfaces, the light emitting semiconductor structure comprising a light-emitting active layer disposed between an n-layer and a p-layer;
• a wavelength converting structure having a first surface in direct contact with the second surface of the light emitting semiconductor structure, a second surface opposite the first surface, and a side surface connecting the first and second surfaces, the wavelength converting structure comprising silicone, particles of a non-luminescent material, and phosphor particles, the wavelength converting structure having a concentration of greater than 60% by volume of the non-luminescent material and phosphor particles;
• and
• a non-metallic, thin-film reflector in direct contact with the side surface of the wavelength converting structure.

A light emitting device (LED) comprising:

• a light emitting semiconductor structure having a first surface, a second surface opposite the first surface, a side surface connecting the first and second surfaces, the light emitting semiconductor structure comprising a light-emitting active layer disposed between an n-layer and a p-layer;
• a wavelength converting structure having a first surface in direct contact with the second surface of the light emitting semiconductor structure without intervening adhesive, a second surface opposite the first surface, a side surface connecting the first and second surfaces and a coefficient of thermal expansion (CTE) of between 6 and 20 ppm/C, the wavelength converting structure comprising silicone, particles of a non-luminescent material, and phosphor particles, the wavelength converting structure having a concentration of greater than 60% by volume of the non-luminescent material and phosphor particles;
• and
• a non-metallic, thin-film reflector in direct contact with the side surface of the wavelength converting structure, the non-metallic, thin-film reflector having a coefficient of thermal expansion (CTE) of between 6 and 20 ppm/C.