Display device and method for manufacturing the same

A method for manufacturing a display device, the method comprising:

• preparing a target substrate comprising a first alignment electrode and a second alignment electrode;
• forming an amorphous silicon layer on the target substrate;
• aligning a light emitting element on the amorphous silicon layer;
• forming a first insulating layer on the light emitting element;
• forming a first electrode on one end of the light emitting element and the amorphous silicon layer;
• and
• forming an insulating portion of the amorphous silicon layer and an electrode portion of the amorphous silicon layer by doping an N-type dopant into a portion of the amorphous silicon layer,
• wherein another end of the light emitting element contacts the electrode portion of the amorphous silicon layer.

A display device comprising:

• a first alignment electrode and a second alignment electrode on a substrate, the first and second alignment electrodes extending in a first direction and being spaced apart from each other;
• a first insulating layer on the first alignment electrode and the second alignment electrode;
• a light emitting element on the first insulating layer, one end of the light emitting element being on the first alignment electrode, another end of the light emitting element being on the second alignment electrode;
• and
• a first electrode and a second electrode on the first insulating layer to be spaced apart from each other, the first electrode overlapping the first alignment electrode to contact the one end of the light emitting element, the second electrode overlapping the second alignment electrode to contact the other end of the light emitting element,
• wherein the first electrode and the second electrode comprise amorphous silicon, and
• wherein the first electrode comprises a P-type dopant, and the second electrode comprises an N-type dopant.

A method for manufacturing a display device, the method comprising:

• preparing a target substrate comprising a first alignment electrode and a second alignment electrode;
• forming a first insulating layer on the target substrate;
• aligning a light emitting element on the first insulating layer;
• forming an amorphous silicon layer covering the light emitting element on the target substrate;
• forming a first mask pattern overlapping the second alignment electrode and doping the first mask pattern with a P-type dopant;
• removing the first mask pattern;
• forming a second mask pattern overlapping the first alignment electrode and doping the second mask pattern with an N-type dopant;
• and
• removing a portion of the amorphous silicon layer overlapping the light emitting element to form a first electrode contacting one end of the light emitting element and a second electrode contacting another end of the light emitting element.