US 2022/0045239 A1 · GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

Abstract

The group III nitride semiconductor light emitting element according to this disclosure has, on a substrate, an n-type semiconductor layer, a light emitting layer, a p-type AlGaN electron blocking layer, a p-type contact layer and a p-side reflection electrode, in this order, wherein, a center emission wavelength of light emitted from the light emitting layer is 250 nm or greater and 330 nm or smaller, the Al composition ratio of the p-type AlGaN electron blocking layer is 0.40 or greater and 0.80 or smaller, the film thickness of the p-type contact layer is 10 nm or greater and 50 nm or smaller, and the p-type contact layer has a p-type AlGaN contact layer having Al composition ratio of 0.03 or greater and 0.25 or smaller.

Claims5

Dependent claims

A group III nitride semiconductor light emitting element, comprising:

a substrate;
an n-type semiconductor layer on the substrate;
a light emitting layer on the n-type semiconductor layer;
a p-type AlGaN electron blocking layer on the light emitting layer;
a p-type contact layer on the p-type AlGaN electron blocking layer;
and
a p-side reflection electrode on the p-type contact layer;
wherein:
a center emission wavelength of light emitted from the light emitting layer is 250 nm or greater and 330 nm or smaller;
an Al composition ratio of the p-type AlGaN electron blocking layer is 0.40 or greater and 0.80 or smaller;
a film thickness of the p-type contact layer is 10 nm or greater and 50 nm or smaller;
and
the p-type contact layer has a p-type AlGaN contact layer having an Al composition ratio of 0.03 or greater and 0.25 or smaller.

10 more elements

Dependencies are inferred from the claim text.

Group iii nitride semiconductor light emitting element and method of manufacturing the same

Life of this patent

Group iii nitride semiconductor light emitting element and method of manufacturing the same

Life of this patent

Abstract

Claims5