US 2022/0045238 A1 · LIGHT EMITTING DEVICE AND WAFER

Abstract

Provided is a light emitting device. A light emitting device includes a first n-type semiconductor layer, a first light emitting layer disposed on the first n-type semiconductor layer, a first p-type semiconductor layer disposed on the first light emitting layer, a second p-type semiconductor layer disposed on the first p-type semiconductor layer, a bonding layer disposed between the first p-type semiconductor layer and the second p-type semiconductor layer, a second light emitting layer disposed on the second p-type semiconductor layer, a second n-type semiconductor layer disposed on the second light emitting layer, a p-type electrode disposed on the second p-type semiconductor layer, a first n-type electrode disposed on the first n-type semiconductor layer, and a second n-type electrode disposed on the second n-type semiconductor layer.

Claims16

Dependent claims

A light emitting device, comprising:

a first n-type semiconductor layer;
a first light emitting layer disposed on the first n-type semiconductor layer;
a first p-type semiconductor layer disposed on the first light emitting layer;
a second p-type semiconductor layer disposed on the first p-type semiconductor layer;
a bonding layer disposed between the first p-type semiconductor layer and the second p-type semiconductor layer;
a second light emitting layer disposed on the second p-type semiconductor layer;
a second n-type semiconductor layer disposed on the second light emitting layer;
a p-type electrode disposed on the second p-type semiconductor layer;
a first n-type electrode disposed on the first n-type semiconductor layer;
and
a second n-type electrode disposed on the second n-type semiconductor layer.

8 more elements

A wafer, comprising:

a substrate;
and
a plurality of light emitting devices disposed on the substrate,
wherein each of the plurality of light emitting devices includes:
a first n-type semiconductor layer disposed on the substrate;
a first light emitting layer disposed on the first n-type semiconductor layer;
a p-type semiconductor layer disposed on the first light emitting layer;
a second light emitting layer disposed on the p-type semiconductor layer;
a second n-type semiconductor layer disposed on the second light emitting layer;
a p-type electrode disposed on the p-type semiconductor layer;
a first n-type electrode disposed on the first n-type semiconductor layer;
and
a second n-type electrode disposed on the second n-type semiconductor layer.

10 more elements

Dependencies are inferred from the claim text.

Light emitting device and wafer

Life of this patent

Light emitting device and wafer

Life of this patent

Abstract

Claims16