US 2022/0045236 A1 · MICRO LED LASER RELEASE FROM SILICON WAFER

Abstract

Methods and systems for improving the yield of laser ablation of semiconductor devices, such as micro-LEDs, in a direct transfer method are described. In the disclosed embodiments, an ablation layer is used to mask a nucleation layer on a donor substrate, with an aperture provided to allow epitaxial growth of a semiconductor structure. The aperture size is selected as the minimum necessary to ensure proper epitaxial growth. Layers disposed above the ablation layer may have larger apertures to that a portion of the semiconductor structure stem overlies the ablation layer, allowing a greater force generated during the ablation process to be directed against the semiconductor structure, improving the likelihood of separation of the structure from the donor substrate. Other embodiments are described.

Claims24

Dependent claims

An apparatus, comprising:

a nucleation layer;
an ablation layer formed on the nucleation layer, the ablation layer comprising a plurality of apertures that expose the nucleation layer;
one or more dielectric layers formed on the ablation layer, the one or more dielectric layers comprising a plurality of apertures wherein individual of the dielectric layer apertures are disposed concentrically with individual of the ablation layer apertures and are at least as large as the individual ablation layer apertures;
and
a plurality of micro-light emitting diodes (micro-LEDs), each of the micro-LEDs comprising a stem and a body, wherein the stem of individual micro-LEDs is formed through the individual ablation layer apertures and individual dielectric layer apertures, and the body extends past the dielectric layer of the one or more dielectric layers that is most proximate to the body.

2 more elements

Dependencies are inferred from the claim text.

Micro led laser release from silicon wafer

Life of this patent

Micro led laser release from silicon wafer

Life of this patent

Abstract

Claims24