Semiconductor device with programmable element and method for fabricating the same

A semiconductor device, comprising:

• a substrate;
• a channel region positioned in the substrate;
• first impurity regions positioned in the substrate and respectively positioned on two ends of the channel region;
• a gate dielectric layer positioned on the channel region;
• a gate bottom conductive layer positioned on the gate dielectric layer;
• a gate via positioned on the gate bottom conductive layer;
• first contacts respectively positioned on the first impurity regions;
• programmable insulating layers respectively positioned on the first contacts;
• top conductive layers respectively positioned on the programmable insulating layers and the gate via.

A method for fabricating a semiconductor device, comprising:

• providing a substrate;
• forming a channel region in the substrate;
• forming a gate dielectric layer on the channel region;
• forming a gate bottom conductive layer on the gate dielectric layer;
• forming first impurity regions on two ends of the channel region;
• forming first contacts on the first impurity regions;
• forming programmable insulating layers on the first contacts;
• forming a gate via on the gate bottom conductive layer;
• and
• forming a top conductive layer on the gate via and the programmable insulating layers.