Transistor device having a source region segments and body region segments

An apparatus, comprising:

• a first trench disposed in a semiconductor region and including a gate electrode;
• a second trench disposed in the semiconductor region;
• a mesa region disposed between the first trench and the second trench, the mesa region having a length aligned along a longitudinal axis orthogonal to a vertical axis aligned along a height of the mesa region;
• a source region segment of a first conductivity type disposed in a side of the mesa region, the source region segment being included in a plurality of source region segments,
• a body region segment of a second conductivity type disposed in the mesa region and having a portion extending across a width of the mesa region, the body region segment being included in a plurality of body region segments, the plurality of body region segments being aligned along the longitudinal axis.

An apparatus, comprising:

• a first trench disposed in a semiconductor region and including a gate electrode;
• a second trench disposed in the semiconductor region;
• a mesa region disposed between the first trench and the second trench, the mesa region having a length aligned along a longitudinal axis orthogonal to a vertical axis aligned along a height of the mesa region;
• a first source region segment of a first conductivity type disposed in a first side of the mesa region, the first source region segment being included in a plurality of source region segments;
• a body region segment of a second conductivity type disposed in a second side of the mesa region opposite the first side of the mesa region, the body region segment being included in a plurality of body region segments, the plurality of body region segments being aligned along the longitudinal axis;
• and
• a second source region segment disposed in the mesa region and having a portion extending across a width of the mesa region.