Semiconductor device

A semiconductor device comprising:

• a semiconductor layer;
• an insulation gate-type first transistor which is formed in the semiconductor layer;
• an insulation gate-type second transistor which is formed in the semiconductor layer;
• and
• a control circuit which is formed in the semiconductor layer such as to be electrically connected to the first transistor and the second transistor, controls the first transistor and the second transistor to be in ON states in a normal operation, and controls the first transistor to be in an OFF state and the second transistor to be in an ON state in an active clamp operation.

A semiconductor device comprising:

• a semiconductor layer;
• an insulation gate-type first transistor which includes a first channel and is formed in the semiconductor layer;
• an insulation gate-type second transistor which includes a second channel and is formed in the semiconductor layer;
• and
• a control wiring which is formed on the semiconductor layer such as to be electrically connected to the first transistor and the second transistor, and transmits control signals that control the first transistor and the second transistor such that utilization rates of the first channel and the second channel in an active clamp operation becomes in excess of zero and less than utilization rates of the first channel and the second channel in a normal operation.

A semiconductor device comprising:

• a semiconductor layer;
• an insulation gate-type first transistor which includes a first channel and is formed in the semiconductor layer;
• an insulation gate-type second transistor which includes a second channel and is formed in the semiconductor layer;
• and
• a control circuit which is formed in the semiconductor layer such as to be electrically connected to the first transistor and the second transistor, and controls the first transistor and the second transistor such that utilization rates of the first channel and the second channel in an active clamp operation becomes in excess of zero and less than utilization rates of the first channel and the second channel in a normal operation.