Semiconductor Device Including a Plurality of Trenches

A semiconductor device, comprising:

• a plurality of trenches extending into a semiconductor body from a first main surface,
• wherein a first group of the plurality of trenches includes a gate electrode and a second group of the plurality of trenches includes a source electrode,
• wherein the source electrode is subdivided into at least a first part and a second part,
• wherein a conductance per unit length of the first part along a longitudinal direction of the source electrode is smaller than a conductance per unit length of the second part along the longitudinal direction of the source electrode, wherein the second part is electrically coupled to a source contact area via the first part, the semiconductor device further comprising:
• a mesa region bounded by a trench of the first group and a trench of the second group, wherein the mesa region includes a source region electrically connected to the source contact area.