Back to results
US 2022/0045197 A1Published application
Method of forming a semiconductor structure
AssigneeNanya Technology Corporation
InventorYing-Cheng CHUANG
Life of this patent
Estimating the term…
Abstract
A method for forming a semiconductor structure includes: providing a structure including a substrate and a target layer disposed on the substrate, and the target layer includes a central area and a periphery area; forming a plurality of linear fin features within the central area in which the linear fin features are substantially parallel to each other and include edge imbalance portions; and removing the edge imbalance portions of the linear fin features to obtain linear uniform fin features.
Claims11
A method for forming a semiconductor structure comprising:
- providing a substrate and a target layer disposed on the substrate, and the target layer comprises a central area and a periphery area;
- forming a plurality of linear fin features within the central area, wherein the linear fin features are substantially parallel to each other and comprise edge imbalance portions;
- and
- removing the edge imbalance portions of the linear fin features to obtain linear uniform fin features.
1 more element
Dependencies are inferred from the claim text.