Uniform interfacial layer on vertical fin sidewalls of vertical transport field-effect transistors

Abstract

A method of forming a semiconductor structure includes patterning a hard mask layer over a top surface of a substrate. The method also includes forming a first portion of one or more vertical fins below the patterned hard mask layer. The method further includes forming a top spacer on sidewalls of the hard mask layer and the first portion of the one or more vertical fins. The method further includes forming a second portion of the one or more vertical fins in the substrate below the top spacer and trimming sidewalls of the second portion of the one or more vertical fins. The method further includes forming an interfacial layer on the trimmed sidewalls of the second portion of the one or more vertical fins. The one or more vertical fins provide one or more vertical transport channels for one or more vertical transport field-effect transistors.

Dependencies are inferred from the claim text.