Back to results
US 2022/0045187 A1Published application
Semiconductor device and method for fabricating the same
AssigneeNanya Technology Corporation
InventorTSE-YAO HUANG
Life of this patent
Estimating the term…
Abstract
The present application discloses a method for fabricating a semiconductor device with a flat surface. The method for fabricating a semiconductor device including providing a substrate, forming a gate structure on the substrate, and forming a plurality of word lines having top surfaces at a same vertical level as a top surface of the gate structure.
Claims5
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a gate structure on the substrate;
- and
- forming a plurality of word lines having top surfaces at a same vertical level as a top surface of the gate structure.
1 more element
Dependencies are inferred from the claim text.