Thin-film transistor for electro-static discharge (esd) protection and esd protection structure

Abstract

A thin-film transistor for electro-static discharge (ESD) protection and an ESD protection structure are provided. The thin-film transistor for ESD protection includes a substrate; an active layer disposed on the substrate; a gate insulating layer disposed on the active layer and on the substrate; a gate electrode disposed on the gate insulating layer and opposite to the active layer; an interlayer insulating layer disposed on the gate electrode and on the gate insulating layer; and a source electrode and a drain electrode disposed on the interlayer insulating layer and spaced apart. The source electrode has first ESD peaks, and the drain electrode has second ESD peaks facing first ESD peaks. The thin-film transistor for ESD protection has a thin-film transistor ESD path and a peak ESD path by disposing opposite ESD peaks on the source and drain electrodes, improving ESD efficiency, preventing circuits from being burnt, and guaranteeing product yield.

Dependencies are inferred from the claim text.