Gate electrode deposition and structure formed thereby
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Yi Lee, Cheng-Lung Hung, Chi On Chui
Life of this patent
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Abstract
A method includes depositing a first work function tuning layer over a gate dielectric layer using an atomic layer deposition process. The atomic layer deposition process comprises depositing one or more first nitride monolayers; and depositing one or more carbide monolayers over the one or more first nitride monolayers. The method further includes depositing an adhesion layer of the first work function tuning layer; and depositing a conductive material over the adhesion layer.
Claims20
A method for forming a gate electrode, the method comprising:
- depositing a first work function tuning layer over a gate dielectric layer using an atomic layer deposition process, wherein the atomic layer deposition process comprises:
- depositing one or more first nitride monolayers;
- and
- depositing one or more carbide monolayers over the one or more first nitride monolayers;
- depositing an adhesion layer of the first work function tuning layer;
- and
- depositing a conductive material over the adhesion layer.
A method comprising:
- forming a first recess between first gate spacers;
- depositing a p-type work function tuning layer in the first recess, wherein depositing the p-type work function tuning layer comprises:
- depositing first monolayers of a nitride;
- depositing second monolayers of a carbide over the first monolayers;
- and
- depositing third monolayers of the nitride over the second monolayers;
- depositing an n-type work function tuning layer in the first recess over the p-type work function tuning layer;
- depositing an adhesion layer in the first recess over the n-type work function tuning layer;
- and
- depositing a conductive fill material in the first recess over the adhesion layer.
A device comprising:
- a first source/drain region;
- a second source/drain region;
- and
- a first gate between the first source/drain region and the second source/drain region, the first gate comprising:
- a gate dielectric;
- and
- a gate electrode over the gate dielectric, the gate electrode comprising:
- a first p-type work function tuning metal over the gate dielectric, the first p-type work function tuning metal comprising carbon and nitrogen;
- an adhesive layer over the first p-type work function tuning metal;
- and
- a fill metal over the adhesive layer.
Dependencies are inferred from the claim text.