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US 2022/0045175 A1Published application
Semiconductor device, inverter circuit, drive, vehicle, and elevator
AssigneeKabushiki Kaisha Toshiba
InventorTatsuo SHIMIZU
Life of this patent
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Abstract
A semiconductor device according to embodiments includes a gate electrode; a gate insulating layer; and a silicon carbide layer having a first plane and a second plane facing the first plane, the silicon carbide layer including a first silicon carbide region of p-type and a second silicon carbide region positioned between the first silicon carbide region and the gate insulating layer, and the second silicon carbide region including at least one oxygen atom bonded to four silicon atoms.
Claims20
A semiconductor device comprising:
- a gate electrode;
- a gate insulating layer;
- and
- a silicon carbide layer having a first plane and a second plane facing the first plane, the silicon carbide layer including
- a first silicon carbide region of p-type and
- a second silicon carbide region positioned between the first silicon carbide region and the gate insulating layer, and the second silicon carbide region including at least one oxygen atom bonded to four silicon atoms.
3 more elements
A semiconductor device comprising:
- a gate electrode;
- a gate insulating layer;
- and
- a silicon carbide layer having a first plane and a second plane facing the first plane, the silicon carbide layer including
- a first silicon carbide region of n-type and
- a second silicon carbide region positioned between the first silicon carbide region and the gate insulating layer, and the second silicon carbide region including at least one oxygen atom bonded to four silicon atoms.
3 more elements
Dependencies are inferred from the claim text.