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US 2022/0045173 A1Published application
Semiconductor device with strain relaxed layer
AssigneeUnited Microelectronics Corp.
InventorsYu-Ming Hsu, Yu-Chi Wang, Yen-Hsing Chen, Tsung-Mu Yang, Yu-Ren Wang
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Abstract
A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.
Claims6
A semiconductor device, comprising:
- an epitaxial substrate comprising:
- a substrate;
- a nucleation layer covering and contacting the substrate, wherein the nucleation layer comprises aluminum nitride;
- a transition layer covering and contacting the nucleation layer, wherein the transition layer comprises aluminum gallium nitride;
- a superlattice covering and contacting the transition layer, wherein the superlattice is formed by periodically stacking aluminum gallium nitride and aluminum nitride;
- and
- a strain-relaxed layer inserted into the superlattice, wherein the superlattice comprises silicon oxide, silicon nitride or silicon carbide.
4 more elements
Dependencies are inferred from the claim text.