Monolithic multi-chip-collective light-emitting diode

Abstract

A monolithic multi-chip-collective light emitting diode includes: an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure; a plurality of monolithically integrated mini chips, wherein each of the mini chips comprises a mini n-contact formed on the n-type structure which is exposed by an opening in the p-type structure and the active-region, a mini p-ohmic contact formed on the p-type structure, and a mini light emitting area defined by the mini p-ohmic contact; an n-bridge metal electrically connecting the mini n-contact of each of the mini chips to an n-bonding pad, wherein the n-bridge metal is formed on the p-type structure and on sidewall of the opening in the p-type structure and the active-region.

Dependencies are inferred from the claim text.