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US 2022/0045113 A1Published application
Solid state imaging device, manufacturing method of the same, and electronic equipment
AssigneeSony Group Corporation
InventorsHiroshi TAYANAKA, Yuuji INOUE, Masashi NAKATA
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Abstract
A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.
Claims20
An imaging device comprising:
- a first pixel configured to receive green light, the first pixel including:
- a first photoelectric conversion region,
- a first on-chip lens, and
- a first light shield disposed between the first photoelectric conversion region and the first on-chip lens, wherein the first photoelectric conversion region overlaps the first light shield is overlapped in a plan view;
- a second pixel disposed adjacent to the first pixel and configured to receive red light, the second pixel including:
- a second photoelectric conversion region,
- a second on-chip lens, and
- a second light shield disposed between the second photoelectric conversion region and the second on-chip lens, wherein the second photoelectric conversion region overlaps the second light shield in the plan view;
- and
- a third pixel disposed adjacent to the first pixel and configured to receive white light, the third pixel including:
- a third photoelectric conversion region,
- a third on-chip lens, and
- a third light shield disposed between the third photoelectric conversion region and the third on-chip lens, wherein the third photoelectric conversion region overlaps the third light shield in the plan view,
- wherein an area of the first light shield is less than an area of the third light shield and greater than an area of the second light shield.
11 more elements
A method of forming an imaging device, the method comprising:
- disposing a first pixel configured to receive green light, the first pixel including:
- a first photoelectric conversion region,
- a first on-chip lens, and
- a first light shield disposed between the first photoelectric conversion region and the first on-chip lens, wherein the first photoelectric conversion region overlaps the first light shield is overlapped in a plan view;
- disposing a second pixel disposed adjacent to the first pixel and configured to receive red light, the second pixel including:
- a second photoelectric conversion region,
- a second on-chip lens, and
- a second light shield disposed between the second photoelectric conversion region and the second on-chip lens, wherein the second photoelectric conversion region overlaps the second light shield in the plan view;
- and
- disposing a third pixel disposed adjacent to the first pixel and configured to receive white light, the third pixel including:
- a third photoelectric conversion region,
- a third on-chip lens, and
- a third light shield disposed between the third photoelectric conversion region and the third on-chip lens, wherein the third photoelectric conversion region overlaps the third light shield in the plan view,
- wherein an area of the first light shield is less than an area of the third light shield and greater than an area of the second light shield.
11 more elements
An electronic apparatus comprising a solid-state imaging device, the solid-state imaging device comprising:
- a first pixel configured to receive green light, the first pixel including:
- a first photoelectric conversion region,
- a first on-chip lens, and
- a first light shield disposed between the first photoelectric conversion region and the first on-chip lens, wherein the first photoelectric conversion region overlaps the first light shield is overlapped in a plan view;
- a second pixel disposed adjacent to the first pixel and configured to receive red light, the second pixel including:
- a second photoelectric conversion region,
- a second on-chip lens, and
- a second light shield disposed between the second photoelectric conversion region and the second on-chip lens, wherein the second photoelectric conversion region overlaps the second light shield in the plan view;
- and
- a third pixel disposed adjacent to the first pixel and configured to receive white light, the third pixel including:
- a third photoelectric conversion region,
- a third on-chip lens, and
- a third light shield disposed between the third photoelectric conversion region and the third on-chip lens, wherein the third photoelectric conversion region overlaps the third light shield in the plan view;
- wherein an area of the first light shield is less than an area of the third light shield and greater than an area of the second light shield.
11 more elements
Dependencies are inferred from the claim text.