Semiconductor devices having multi-channel active regions and methods of forming same

A semiconductor device comprising:

• a support substrate;
• an insulating layer on the support substrate;
• a semiconductor pattern on the insulating layer, the semiconductor pattern being in contact with the insulating layer;
• a pair of source/drain patterns on the semiconductor pattern;
• a channel structure disposed between the pair of source/drain patterns, the channel structure comprising channel patterns stacked and spaced apart from each other;
• and
• a gate electrode intersecting the channel structure and extending in a first direction,
• wherein the gate electrode includes a first portion disposed between the channel structure and the insulating layer, and
• wherein a level of a bottom surface of the first portion is lower than levels of bottommost surfaces of the source/drain patterns.

A semiconductor device comprising:

• a support substrate;
• an insulating layer on the support substrate;
• a semiconductor pattern provided on the insulating layer and being in contact with the insulating layer;
• a pair of source/drain patterns on the semiconductor pattern;
• a channel structure disposed between the pair of source/drain patterns, the channel structure comprising at least one channel pattern;
• and
• a gate electrode intersecting the channel structure and extending in a first direction,
• wherein the gate electrode includes one portion disposed between the insulating layer and a lowermost portion of the channel structure, and the one portion penetrates the semiconductor pattern,
• wherein a lower portion of the source/drain pattern is located in the semiconductor pattern, and
• wherein the source/drain pattern is spaced apart from the insulating layer with the semiconductor pattern interposed therebetween.