Devices with staggered body contacts
AssigneeGlobalFoundries U.S. Inc.
InventorAnupam DUTTA
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to devices with staggered body contacts and methods of manufacture. The device includes: a gate structure on a semiconductor substrate material, the gate structure comprising a gate body with a width and a length; a plurality of body contacts electrically contacting a channel region under the gate body on at least one side of the gate body along its width; and isolation structures isolating the plurality of body contacts from a source region and a drain region associated with the gate structure.
Claims20
A structure comprising:
- a gate structure on a semiconductor substrate material, the gate structure comprising a gate body with a width and a length;
- a plurality of body contacts electrically contacting a channel region under the gate body on at least one side of the gate body along its width;
- and
- isolation structures isolating the plurality of body contacts from a source region and a drain region associated with the gate structure.
A structure comprising:
- a semiconductor on insulator substrate;
- an insulator layer underlying the semiconductor on insulator substrate;
- at least one gate structure on the semiconductor on insulator substrate;
- a source region and a drain region on opposing sides of the at least one gate structure, the source region and the drain region extending to the insulator layer;
- a plurality of body contacts electrically contacting the at least one gate body on at least one side along its width;
- and
- isolation structures extending to the insulator layer and isolating the plurality of body contacts from the source region and the drain region.
A structure comprising:
- at least one gate structure on a semiconductor substrate material;
- an insulator layer directly underneath the semiconductor substrate material;
- a source region on a first side of the at least one gate structure;
- a drain region on a second side of the at least one gate structure;
- a plurality of staggered body contacts which are offset from one another and which are provided along a width of the at least one gate structure on both the first side and the second side, respectively;
- and
- isolation structures extending to the insulator layer and which isolates the staggered body contacts from the source region the drain region and each of the plurality of staggered body contacts.
Dependencies are inferred from the claim text.