Integrated circuit devices and methods of manufacturing the same

A method of manufacturing an integrated circuit device, the method comprising:

• forming, on a substrate, a structure comprising a plurality of insulating films and a plurality of sacrificial films alternately stacked with the plurality of insulating films;
• forming a channel hole that extends through the structure;
• removing portions of the plurality of insulating films through the channel hole to form sides of the plurality of insulating films recessed relative to sides the plurality of sacrificial films;
• forming a blocking dielectric film on the sides of the plurality of insulating films and the sides of the plurality of sacrificial films and a preliminary charge storage film on the blocking dielectric film in the channel hole;
• forming a first cover sacrificial layer on the preliminary charge storage film in the channel hole, the first cover sacrificial layer comprising a plurality of grooves on the sides of the plurality of insulating films, respectively;
• forming a plurality of first cover layers that expose portions of the preliminary charge storage film by removing portions of the first cover sacrificial layer adjacent to the plurality of grooves;
• and
• forming at least one charge trap film by removing at least one of the portions of the preliminary charge storage film using the plurality of first cover layers as an etch mask.

A method of manufacturing an integrated circuit device, the method comprising:

• forming, on a substrate, a structure comprising a plurality of insulating films and a plurality of sacrificial films alternately stacked with the plurality of insulating films;
• forming a channel hole that extends through the structure, the channel hole exposing sides of the plurality of insulating films and sides of the plurality of insulating films;
• removing portions of the plurality of insulating films through the channel hole;
• forming a blocking dielectric film on the sides of the plurality of insulating films and the sides of the plurality of sacrificial films in the channel hole;
• forming a preliminary charge storage film on the blocking dielectric film in the channel hole;
• forming a first cover layer on the preliminary charge storage film and a second cover layer on the first cover layer in the channel hole, the first cover layer comprising a recess on the side of one of the plurality of insulating films;
• forming at least one charge storage film by removing a portion of the preliminary charge storage film, through the recess;
• and
• replacing the plurality of sacrificial films with a plurality of word line structures.