Three-dimensional flash memory device with increased storage density

A three-dimensional flash memory device, comprising:

• a substrate;
• a column of semiconducting material disposed above the substrate, extending along a vertical direction;
• a word line stack wrapping around the column;
• and
• a charge-storage element disposed between the word line stack and the column, wherein the column, the charge-storage element, and the word line stack constitutes at least two memory cells.

A three-dimensional flash memory device, comprising:

• a substrate;
• multiple columns of semiconducting material disposed above the substrate, each of the multiple columns extending along a vertical direction;
• a word line stack wrapping around the multiple columns;
• and
• a charge-storage element disposed between the word line stack and each of the multiple columns, wherein each of the multiple columns, the charge-storage element, and the word line stack constitute multiple memory cells.