Novel 3d nand memory device and method of forming the same

A method for forming a semiconductor device, comprising:

• forming a channel structure that extends from a side of a substrate, the channel structure having sidewalls and a bottom region, the channel structure further including a bottom channel contact that is positioned at the bottom region, a channel dielectric region that includes side portions along the sidewalls of the channel structure and a bottom portion over a top surface of the bottom channel contact, and a channel layer that is formed along side portions of the channel dielectric region, further extends through the bottom portion of the channel dielectric region, and extends into the bottom channel contact from the top surface of the bottom channel contact;
• and
• forming a high-k layer over the channel layer along the sidewalls of the channel structure and over the bottom channel contact.