Semiconductor device and a manufacturing method of semiconductor device

A semiconductor device comprising:

• a transistor;
• a first connection conductor connected to the transistor;
• a first bonding pad connected to the first connection conductor;
• a second bonding pad connected to the first bonding pad;
• a second connection conductor connected to the second bonding pad;
• a channel structure connected to the second connection conductor;
• and
• a chip guard including a first guard part and a second guard part on the first guard part,
• wherein the second guard part surrounds the first bonding pad, the second bonding pad, the second connection conductor, and the channel structure.

A semiconductor device comprising:

• a transistor;
• a first connection conductor connected to the transistor;
• a first bonding pad connected to the first connection conductor;
• a second bonding pad connected to the first bonding pad;
• a second connection conductor connected to the second bonding pad;
• a channel structure connected to the second connection conductor;
• a stack structure surrounding the channel structure;
• and
• a chip guard surrounding the first connection conductor, the first bonding pad, the second bonding pad, the second connection conductor, the channel structure, and the stack structure,
• wherein the chip guard includes a first guard part and a second guard part on the first guard part, and
• wherein the first bonding pad, the second bonding pad, the second connection conductor, the channel structure, and the stack structure are disposed at a level higher than a level of a bottom surface of the second guard part and lower than a level of a top surface of the second guard part.