Semiconductor storage device and method for manufacturing the same

Abstract

A semiconductor storage device includes a stacked portion including an insulating layer and a conductor layer that are alternately stacked, and a plurality of memory pillars extending into the stacked portion. When viewed along a direction perpendicular to a surface of the stacked portion, the stacked portion includes a first area in which the plurality of memory pillars are provided, and a second area adjacent to the first area and free of the memory pillars. The first memory pillar of the plurality of memory pillars formed at a position closest to a boundary between the first area and the second area and a second memory pillar of the plurality of memory pillars that is adjacent to the first memory pillar have the same width.

Dependencies are inferred from the claim text.