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US 2022/0045078 A1Published application
Semiconductor storage device and manufacturing method thereof
OwnerKazuhito FURUMOTOinventor
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Abstract
A method of manufacturing a semiconductor storage device includes forming a coating layer covering a base layer, forming a recess that penetrates the coating layer and into the base layer, enlarging a portion of the recess to expose a portion of the coating layer in contact with the base layer, and etching a surface of the coating layer exposed inside the recess.
Claims18
A semiconductor storage device comprising:
- a base layer;
- a coating layer covering the base layer;
- and
- a columnar body extending into the coating layer and connected to the base layer,
- wherein, along a longitudinal direction of the columnar body extending from a boundary between the base layer and the coating layer, a cross section of the columnar body perpendicular to the longitudinal direction has a width that becomes smaller for a distance.
2 more elements
A method of manufacturing a semiconductor storage device comprising:
- forming a coating layer covering a base layer;
- forming a recess that penetrates the coating layer and into the base layer;
- enlarging a portion of the recess to expose a portion of the coating layer in contact with the base layer;
- and
- etching a surface of the coating layer exposed inside the recess.
2 more elements
Dependencies are inferred from the claim text.