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US 2022/0045071 A1Published application
Semiconductor structure and method for manufacturing semiconductor structure
AssigneeChangxin Memory Technologies, Inc.
InventorsYachuan HE, Hsin-Pin HUANG
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Abstract
A semiconductor structure includes a substrate, an isolation structure formed in the substrate, and a word line including a first convex portion and a second convex portion. The first convex portion and the second convex portion are located in the isolation structure, and a depth of the first convex portion is greater than a depth of the second convex portion.
Claims19
A semiconductor structure, comprising:
- a substrate;
- an isolation structure formed in the substrate;
- and
- a word line comprising a first convex portion and a second convex portion, wherein the first convex portion and the second convex portion are located in the isolation structure, and a depth of the first convex portion is greater than a depth of the second convex portion.
1 more element
A method for manufacturing a semiconductor structure, comprising:
- providing a substrate having an isolation structure and a plurality of active regions, the isolation structure being disposed among the plurality of active regions;
- forming a first groove and a second groove at intervals on the isolation structure, wherein a depth of the first groove is greater than a depth of the second groove;
- and
- forming a word line in the substrate, wherein the word line comprises a main body portion, a first convex portion and a second convex portion, and the first convex portion and the second convex portion are respectively disposed in the first groove and the second groove.
1 more element
Dependencies are inferred from the claim text.