Semiconductor structure manufacturing method

A semiconductor structure manufacturing method, comprising:

• providing a substrate, which comprises a substrate layer and a plurality of bit line structures arranged on the substrate layer in a first direction, the substrate layer comprising shallow trench isolation structures, active areas defined by the shallow trench isolation structures, and a plurality of word line structures arranged in a second direction, wherein the word line structures pass through the shallow trench isolation structures and the active areas, two adjacent bit line structures and two adjacent word line structures define a conductive contact region which exposes a part of a corresponding active area;
• forming a conducting layer between the bit line structures, the conducting layer covering the substrate layer, and the conducting layer extending along the first direction;
• partially removing the conducting layer with the conducting layer corresponding to the conductive contact region retained to form first capacitor wires;
• and
• forming an isolation layer filling gaps between the first capacitor wires.