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US 2022/0045067 A1Published application
Method of manufacturing semiconductor device having buried word line
AssigneeNanya Technology Corporation
InventorCHIH-WEI HUANG
Life of this patent
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Abstract
The present disclosure provides a method of manufacturing a semiconductor device. The method includes steps of creating at least one trench in a substrate; depositing a conductive material to partially fill the trench; and forming an insulative piece in the trench and extending into the conductive material.
Claims10
A method of manufacturing a semiconductor device, comprising:
- creating at least one trench in a substrate;
- depositing a conductive material to partially fill the trench;
- and
- forming an insulative piece in the trench and extending into the conductive material.
1 more element
Dependencies are inferred from the claim text.