US 2022/0045047 A1Published application

Semiconductor device

AssigneeFuji Electric Co., Ltd.

InventorYuichi HARADA

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Abstract

Provided is a semiconductor device comprising a semiconductor substrate that includes a transistor region; an emitter electrode that is provided on the semiconductor substrate; a first dummy trench portion that is provided on the transistor region of the semiconductor substrate and includes a dummy conducting portion that is electrically connected to the emitter electrode; and a first contact portion that is a partial region of the transistor region, provided between an end portion of a long portion of the first dummy trench portion and an end portion of the semiconductor substrate, and electrically connects the emitter electrode and a semiconductor region with a first conductivity type provided in the transistor region.

Claims20

Dependent claims

A semiconductor device including a transistor region, comprising:

an insulating film provided on a semiconductor substrate;
an emitter electrode contacting the semiconductor substrate and the insulating film;
a dummy trench portion provided in the transistor region and including a long portion that extends in a first direction, the dummy trench portion being electrically connected to the emitter electrode through a first portion in which the insulating film is not provided;
and
a first contact portion, provided between the first portion and an end portion of the semiconductor substrate in the first direction and electrically connecting the emitter electrode and a semiconductor region with a first conductivity type that is provided in the semiconductor substrate,
wherein the first contact portion includes a region extending in the first direction.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/452,069Filed 25 Oct 2021
Priority: JP 2017-22112716 Nov 2017
Published: 10 Feb 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification17 codes

H10D 84/617
Combinations of vertical BJTs and one or more of diodes, resistors or capacitors: combinations of vertical BJTs and only diodes
H10D 8/422
Diodes: pN diodes having the PN junctions in mesas
H10D 12/461
Vertical IGBTs: having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
H10D 12/481
Having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions: having gate…

Family

Application16/664,930Continuation · filed 27 Oct 2019
Application17/452,069Continuation
US 11,158,631 B2Related patent
US 11,631,665 B2Related patent
US 2020/0058645 A1Published application
US 2022/0045047 A1This patent

From the US filing history. Foreign family members aren’t listed.

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