Semiconductor device and method of manufacturing a semiconductor device
AssigneeAmkor Technology Singapore Holding Pte. Ltd.
InventorsIn Su Mok, Won Geol Lee, Il Bok Lee, Won Myoung Ki
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Abstract
In one example, a semiconductor device comprises a base assembly comprising a first substrate, a first device on a top surface of the first substrate, and a first encapsulant on the top surface of the first substrate and bounding a side surface of the first device. The semiconductor device further comprises a conductive pillar on the first substrate and in the first molding compound, wherein the conductive pillar comprises a non-conductive pillar core and a conductive pillar shell on the pillar core.
Claims21
(canceled)
A semiconductor device, comprising:
- a base assembly comprising
- a first substrate,
- a first device on a top surface of the first substrate, and
- a first encapsulant on the top surface of the first substrate and bounding a side surface of the first device;
- and
- a conductive pillar on the first substrate and in the first encapsulant;
- wherein:
- the conductive pillar comprises a non-conductive pillar core and a conductive pillar shell on the non-conductive pillar core;
- and
- the non-conductive pillar core does not extend above a top side of the first encapsulant.
A method to manufacture a semiconductor device, comprising:
- providing a pillar core of non-conductive material on a top surface of a first substrate;
- providing a pillar shell on the pillar core to form a conductive pillar;
- placing a first device on the top surface of the first substrate;
- and
- providing a first encapsulant on the top surface of the first substrate to contact a side surface of the first device and the conductive pillar;
- wherein the pillar core does not extend above a top side of the first encapsulant.
A method to manufacture a semiconductor device, comprising:
- providing a redistribution layer (RDL) substrate on a carrier, wherein the RDL substrate comprises a dielectric structure and a redistribution structure in the dielectric structure;
- providing a non-conductive material on a top surface of the RDL substrate;
- removing a portion of the non-conductive material to form a pillar core;
- providing a pillar shell on the pillar core to form a conductive pillar electrically coupled with the redistribution structure;
- placing a device on the RDL substrate to contact the redistribution structure;
- providing an encapsulant on the top surface of the RDL substrate and in contact with a side surface of the device;
- and
- removing the carrier and providing an interconnect on a bottom surface of the RDL substrate electrically coupled with the redistribution structure;
- wherein the pillar core does not extend above a top side of the encapsulant.
Dependencies are inferred from the claim text.