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US 2022/0045027 A1Published application
Semiconductor device and method of manufacturing the same
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorsSHOZO OCHI, HIDETOSHI KITAURA
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Abstract
A semiconductor device includes an insulation board, an electrode provided on the insulation board, a bonding layer provided on the electrode and made of a sintered body of metal particles having an average particle size of nano-order, and a semiconductor element bonded to the electrode via the bonding layer. A layer thickness of the bonding layer is greater than or equal to 220 μm and less than or equal to 700 μm.
Claims14
A semiconductor device comprising:
- an insulation board;
- an electrode provided on the insulation board;
- a bonding layer provided on the electrode and made of a sintered body of metal particles having an average particle size of nano-order;
- and
- a semiconductor element bonded to the electrode via the bonding layer,
- wherein a layer thickness of the bonding layer is greater than or equal to 220 μm and less than or equal to 700 μm.
3 more elements
A method of manufacturing a semiconductor device, comprising:
- printing a first sinter bonding material containing metal nanoparticles on an electrode bonded to an insulation board;
- placing a second bonding layer made of a sintered body of metal particles having an average particle size of nano-order on the first sinter bonding material;
- printing a third sinter bonding material containing metal nanoparticles on the second bonding layer;
- placing a semiconductor element on the third sinter bonding material;
- and
- sintering the first sinter bonding material and the third sinter bonding material by heating while pressurizing after the semiconductor element is placed, forming a sinter bonding layer including the second bonding layer, and then bonding the electrode and the semiconductor element via the sinter bonding layer.
3 more elements
Dependencies are inferred from the claim text.