Semiconductor package component, base substrate for rf transistor, and manufacturing method thereof
AssigneeAmosense Co., Ltd.
InventorJi-Hyung Lee
Life of this patent
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Abstract
A semiconductor package component and a semiconductor package including the same. More particularly, the present disclosure relates to a semiconductor package component for an RF power transistor and a semiconductor package including the same. Further particularly, it relates to a semiconductor package component for an RF power transistor and a semiconductor package including the same, capable of adjusting impedance matching of an RF transistor by connecting a die chip and a lead frame with a wire so that a length of the wire is reduced as much as the protruding height of the base substrate.
Claims20
A semiconductor package component comprising:
- a base substrate;
- a ceramic layer formed on an upper portion of the base substrate;
- a lead frame formed on an upper portion of the ceramic layer;
- and
- a die chip mounted on the upper portion of the base substrate,
- wherein a protrusion is formed on the base substrate, the die chip is mounted on the protrusion, and the die chip and the lead frame are connected with a wire.
A base substrate for an RF transistor made of a metal, comprising:
- a protrusion provided on one side of the base substrate,
- wherein the base substrate is formed in a multi-layer.
A method of manufacturing a base substrate for an RF transistor made of metal, the method comprising the step of:
- forming a protrusion on one side of the base substrate.
Dependencies are inferred from the claim text.