Semiconductor device with porous insulating layers and method for fabricating the same

A semiconductor device, comprising:

• a substrate;
• a top contact positioned above the substrate;
• a top conductive layer positioned on the top contact;
• porous insulating layers positioned on two sides of the top contact;
• a first framework layer positioned on bottom surfaces of the porous insulating layers, sidewalls of the porous insulating layers, and on bottom surface of the top contact;
• and
• a second framework layer positioned between the top contact and the porous insulating layers, between the top contact and the first framework layers, and positioned on top surface of the porous insulating layers.

A method for fabricating a semiconductor device, comprising:

• providing a substrate;
• forming an insulating layer above the substrate;
• forming a first opening in the insulating layer;
• conformally forming a first framework layer in the first opening;
• forming an energy-removable layer on the first framework layer and filling the first opening;
• forming a second opening along the energy-removable layer and the first framework layer;
• conformally forming a second framework layer in the second opening;
• forming a top contact on the second framework layer and filling the second opening and forming a top conductive layer on the top contact;
• and
• performing an energy treatment to transform the energy-removable layer into porous insulating layers on two sides of the top contact.