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US 2022/0044996 A1Published application
Semiconductor device with connecting structure and method for fabricating the same
AssigneeNanya Technology Corporation
InventorSHING-YIH SHIH
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Abstract
The present application discloses a method for fabricating a semiconductor device. The method includes providing a first semiconductor structure; and forming a first connecting structure comprising a first connecting insulating layer on the first semiconductor structure, a plurality of first connecting contacts in the first connecting insulating layer, and a plurality of first supporting contacts in the first connecting insulating layer.
Claims6
A method for fabricating a semiconductor device, comprising:
- providing a first semiconductor structure;
- and
- forming a first connecting structure comprising a first connecting insulating layer on the first semiconductor structure, a plurality of first connecting contacts in the first connecting insulating layer, and a plurality of first supporting contacts in the first connecting insulating layer.
Dependencies are inferred from the claim text.