Memory Arrays And Methods Used In Forming A Memory Array

A memory array comprising strings of memory cells, comprising:

• laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, channel-material strings of memory cells in the stack;
• intervening material laterally-between and longitudinally-along the immediately-laterally-adjacent memory blocks, the intervening material extending upwardly from an uppermost of the alternating insulative and conductive tiers to a respective top surface of the intervening material between the blocks;
• conductive vias in insulating material that is directly above the channel-material strings, individual of the conductive vias being directly electrically coupled to individual of the channel-material strings, the conductive vias having respective top surfaces;
• and
• at least a portion of the respective intervening-material-top surfaces being elevationally-coincident with at least a portion of the respective conductive-via-top surfaces.

A memory array comprising strings of memory cells, comprising:

• a vertical stack comprising alternating insulative tiers and conductive tiers, channel-material strings of memory cells in the stack;
• conductive vias in insulating material that is directly above the channel-material strings, individual of the conductive vias being directly electrically coupled to individual of the channel-material strings, the conductive vias having respective top surfaces;
• through-array vias (TAVs) in the stack having respective top surfaces;
• and
• at least a portion of the respective conductive-via-top surfaces being elevationally-coincident with at least a portion of the respective TAV-top surfaces.