Semiconductor device

A semiconductor device, comprising:

• an interlayer insulating layer on a substrate;
• a conductive line on the interlayer insulating layer;
• and
• a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line,
• wherein:
• the contact plug includes a protrusion protruding upwardly from a top surface of the interlayer insulating layer,
• the conductive line includes:
• a line pattern extending in one direction on the interlayer insulating layer;
• and
• a line barrier pattern between the line pattern and the interlayer insulating layer,
• a topmost surface of the protrusion is located at a higher height from the substrate than the top surface of the interlayer insulating layer, and
• the line barrier pattern extends from the top surface of the interlayer insulating layer onto the topmost surface of the protrusion.

A semiconductor device, comprising:

• an active fin on a substrate, the active fin including a plurality of semiconductor patterns spaced apart from each other in a first direction perpendicular to a top surface of the substrate;
• a gate electrode on the active fin, the gate electrode covering a topmost surface of the active fin and extends between the plurality of semiconductor patterns;
• an interlayer insulating layer on the gate electrode;
• a conductive line on the interlayer insulating layer;
• and
• a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line,
• wherein:
• the contact plug includes a protrusion protruding upwardly from a top surface of the interlayer insulating layer, and
• the protrusion has a width in a second direction parallel to the top surface of the substrate, and a width of a lower region of the protrusion is greater than a width of an upper region of the protrusion.