Thermal conductive silicone composition and semiconductor device
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsShota AKIBA, Kunihiro YAMADA, Kenichi TSUJI
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsShota AKIBA, Kunihiro YAMADA, Kenichi TSUJI
Estimating the term…
Provided are a thermal conductive silicone composition having a favorable heat dissipation property; and a semiconductor device using such composition. The thermal conductive silicone composition contains: (A) an organopolysiloxane that has a kinetic viscosity of 10 to 100,000 mm2/s at 25° C., and is represented by the following average composition formula (1) R1aSiO(4-a)/2 (1) wherein R1 represents a hydrogen atom, a saturated or unsaturated monovalent hydrocarbon group having 1 to 18 carbon atoms or a hydroxy group, and a represents a number satisfying 1.8≤a≤2.2; (B) a silver powder having a tap density of not lower than 3.0 g/cm3, a specific surface area of not larger than 2.0 m2/g and an aspect ratio of 1 to 30; (C) an elemental gallium and/or gallium alloy having a melting point of 0 to 70° C. and being present at a mass ratio [Component (C)/{Component (B)+Component (C)}] of 0.001 to 0.1; and (D) a catalyst.
A thermal conductive silicone composition comprising:
A method for manufacturing a semiconductor device, comprising a step of heating the thermal conductive silicone composition according to claim 1 to 80° C. or higher with the thermal conductive silicone composition being sandwiched between a heat-generating electronic part and a heat dissipator, and with a pressure of 0.01 MPa or higher being applied thereto.
Dependencies are inferred from the claim text.