Amplifier with integrated temperature sensor

A system, comprising:

• a semiconductor die, including:
• a transistor formed in an active area of the semiconductor die, the transistor including an output terminal and a control terminal,
• a first temperature sensor contact pad, and
• a first temperature sensor, wherein a first portion of the active area is on a first side of the first temperature sensor and a second portion of the active area is on a second side of the first temperature sensor opposite the first side, the first temperature sensor is between the control terminal and the output terminal, the first temperature sensor is coupled to the first temperature sensor contact pad, and the first temperature sensor is configured to generate a first output signal at the first temperature sensor contact pad, wherein a magnitude of the first output signal is proportional to a temperature of the first temperature sensor;
• and
• a control circuit coupled to the first temperature sensor contact pad, wherein the control circuit is configured to:
• determine that a magnitude of the first output signal of the first temperature sensor has passed a threshold, and
• in response to determining the magnitude of the first output signal of the first temperature sensor has passed the threshold, modify an operation of the transistor.