US 2022/0044978 A1 · SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Abstract

A device (2) is provided on an upper surface of the device substrate (1). A sealing frame (16) made of a non-electrolytic plating reactive catalyst metal is provided on the upper surface of the device substrate (1) and surrounds the device (2). An upper surface of the device substrate (1) and a lower surface of the cap substrate (10) are joined in a hollow state through the sealing frame (16). A plurality of electrodes (8,11,12) are connected to the device (2) and extended out of the device substrate (1) and the cap substrate (10). A metal film (20) is provided on an outer surface of the sealing frame (16) and not provided on the device substrate (1) and the cap substrate (10).

Claims19

Dependent claims

A semiconductor device comprising:

a device substrate;
a device provided on an upper surface of the device substrate;
a cap substrate;
a sealing frame provided on the upper surface of the device substrate, surrounding the device, made of a non-electrolytic plating reactive catalyst metal, and joining the device substrate and the cap substrate in a hollow state;
a plurality of electrodes connected to the device and extended out of the device substrate and the cap substrate;
and
a metal film provided on an outer surface of the sealing frame and not provided on the device substrate and the cap substrate.

4 more elements

A method for manufacturing a semiconductor device comprising:

forming a device on an upper surface of a device substrate;
forming a sealing frame surrounding the device on the upper surface of the device substrate by using metal particle paste of a non-electrolytic plating reactive catalyst metal;
aligning the device substrate and a cap substrate and joining the device substrate and the cap substrate in a hollow state through the sealing frame;
forming a plurality of electrodes connected to the device and extended out of the device substrate and the cap substrate;
and
after joining the device substrate and the cap substrate, forming a metal film on an outer surface of the sealing frame by non-electrolytic plating without forming the metal film on the device substrate and the cap substrate.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

17/276,348Filed 6 Mar 2019

Published

10 Feb 2022

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10W 76/132
Containers comprising a conductive base serving as an interconnection: having other interconnections through an insulated passage in the…
H10W 76/17
Containers or parts thereof: characterised by their materials
H10W 70/611
Insulating or insulated package substrates; Interposers; Redistribution layers: for connecting multiple chips together
H10W 70/685
Shapes or dispositions thereof: comprising multiple insulating layers

Semiconductor device and method for manufacturing the same

Life of this patent

Semiconductor device and method for manufacturing the same

Life of this patent

Abstract

Claims19