Gas phase production of radicals for dielectrics
AssigneeTokyo Electron Limited
InventorAnthony Dip
Life of this patent
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Abstract
A method for depositing a dielectric material includes heating a substrate disposed in a dielectric deposition chamber; dispensing a dielectric precursor from a first showerhead towards a major outer surface of the substrate; dispensing a mixture containing oxygen and ammonia from a second showerhead towards the major outer surface of the substrate; and reacting the dielectric precursor with the mixture to deposit a layer of oxynitride dielectric material on the substrate.
Claims22
A method for depositing a dielectric material, the method comprising:
- heating a substrate disposed in a dielectric deposition chamber;
- dispensing a dielectric precursor from a first showerhead towards a major outer surface of the substrate;
- dispensing a mixture containing oxygen and ammonia from a second showerhead towards the major outer surface of the substrate;
- and
- reacting the dielectric precursor with the mixture to deposit a layer of oxynitride dielectric material on the substrate.
A method for depositing silicon oxynitride, the method comprising:
- heating a substrate disposed on a substrate holder in a dielectric deposition chamber;
- rotating the substrate holder under a first showerhead;
- dispensing a silicon precursor from the first showerhead towards a major outer surface of the substrate;
- rotating the substrate holder under a second showerhead;
- dispensing a mixture of hydrogen, oxygen, and ammonia from the second showerhead towards the major outer surface;
- and
- depositing the silicon oxynitride over the substrate by reacting the silicon precursor with the mixture.
A method for depositing a dielectric material, the method comprising:
- loading a substrate on a substrate holder disposed within a processing chamber;
- heating the substrate within the processing chamber;
- dispensing a dielectric precursor from a first showerhead in a first zone over the substrate holder;
- dispensing a mixture of hydrogen, oxygen, and ammonia from a second showerhead in a second zone over the substrate holder;
- moving the substrate holder to repeatedly transfer the substrate between the first zone and the second zone;
- dispensing silicon precursor from the first showerhead towards a major surface of the substrate in the first zone;
- dispensing the mixture from the second showerhead towards the major surface of the substrate from the second showerhead;
- and
- depositing the dielectric material on the substrate by reacting the silicon precursor with the mixture.
Dependencies are inferred from the claim text.